SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation. Power semiconductors that make use of SiC achieve significant reduction in energy consumption, and can be used to develop smaller and lighter products.

Features

SiC-SBD Equipped IGBT Hybrid Module V Series

Utilize high performance chip

• Low loss V Series IGBT
• Low loss SiC-SBD

Package compatibility with conventional Si-IGBT module products

SiC Schottky-Barrier Diodes (SBD)

High speed switching

• High frequency operation of power supplies, and miniaturization and weight reductions for systems

Low-VF

Low-IR

• Tj=175°C guaranteed, high temperature operation of power supplies, low loss, high efficiency

High reverse surge withstand capability